Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages

Author

Kim, Young-Kwang ; Lee, Seok-Ha ; Lee, Hyui-Seung ; Kim, Bong-Seok ; Lee, Yong-Hee ; Lee, Jinju ; Cheng, Kangguo ; Chen, Zhi ; Hess, Karl ; Lyding, Joseph W.

Author_Institution

ASIC Div., Samsung Electron. Co. Ltd., Kyungki-Do, South Korea

fYear

1999

fDate

1999

Firstpage

65

Lastpage

68

Abstract

The latent damage induced by plasma processes has been investigated by applying polarized constant current stress to the gate electrode of n- and p-MOSFETs. By optimizing the stressing conditions to effectively monitor the plasma damage, deuterium sintering is found to be very efficient at reducing plasma damage by suppressing the regeneration of interface states

Keywords

MOSFET; deuterium; electric current; electrodes; interface states; plasma materials processing; process monitoring; semiconductor device testing; sintering; sputter etching; surface charging; D; deuterium sintering process; device design rule; gate electrode; interface state regeneration suppression; interface states; latent damage; n-MOSFETs; p-MOSFETs; plasma damage; plasma damage monitoring; plasma etch; plasma induced damage; plasma processes; polarized constant current stress; stressing conditions optimization; Annealing; Deuterium; Hydrogen; MOS devices; Plasma applications; Plasma devices; Plasma properties; Polarization; Stress; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1999 4th International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-9651577-3-3

Type

conf

DOI

10.1109/PPID.1999.798814

Filename

798814