Title :
A method for reducing notching and electron shading damage in a continuous wave ECR metal etcher
Author_Institution :
Semicond. Div., Yamaha Corp., Shizouka, Japan
Abstract :
The effects of the etching gas chemistry, the RF bias frequency and the ECR position in pattern-dependent charging were studied using an ECR plasma etch tool. Lowering the RF bias frequency and/or employing a gas chemistry containing an element with small mass such as hydrogen reduced electron shading damage and notching. Notching was suppressed by increasing the distance between the ECR point and the wafer. Furthermore, it is effective to employ an etching gas that contains elements of small atomic weight for reduction of electron shading damage by using continuous wave (CW) high-density plasmas
Keywords :
integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; integrated circuit yield; plasma materials processing; sputter etching; surface charging; CW high-density plasmas; ECR plasma etch tool; ECR point-wafer distance; ECR position; H2; RF bias frequency; atomic weight; continuous wave ECR metal etcher; electron shading damage; etching gas; etching gas chemistry; hydrogen etch gas chemistry; notching; pattern-dependent charging; Capacitors; Conducting materials; Electrons; Etching; Frequency; Plasma applications; Plasma chemistry; Plasma density; Plasma waves; Testing;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798825
