DocumentCode
3242821
Title
Hybrid 3000 A-MOSFET for GTO cascode switches
Author
Oetjen, J. ; Sittig, R.
Author_Institution
Inst. fur Elektrophys., Tech. Univ. Braunschweig, Germany
fYear
1997
fDate
26-29 May 1997
Firstpage
241
Lastpage
244
Abstract
A hybrid high current MOSFET module for switching of GTO cascode switches is presented. The module consists of two separately controllable devices to be connected to gate and cathode of a GTO. Each is realized by connecting a large number of chips in parallel. The chosen arrangement reveals an extremely low internal stray inductance. Thus it is possible to switch currents from the cathode of the GTO to its gate with a di/dt of up to 30 kA/μs. Turning off a GTO in the cascode configuration shows an increased reverse biased safe operating area (RBSOA), so turn-off snubber can be omitted
Keywords
MOS-controlled thyristors; inductance; losses; power semiconductor switches; 3000 A; GTO cascode switches; cascode configuration; current switching; high current MOSFET module; internal stray inductance; reverse biased safe operating area; Cathodes; Inductance; Joining processes; MOSFET circuits; Snubbers; Switches; Switching loss; Thyristors; Turning; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location
Weimar
ISSN
1063-6854
Print_ISBN
0-7803-3993-2
Type
conf
DOI
10.1109/ISPSD.1997.601483
Filename
601483
Link To Document