DocumentCode
3242822
Title
Motion detection sensor based on CMOS floating-gate devices
Author
Ponce-Ponce, V.H. ; Gomez-Castaneda, F. ; Moreno-Cadenas, J.A. ; Flores-Nava, L.M.
Author_Institution
Electrical Engineering Department, CINVESTAV-IPN, AV- IPN, No. 2580, C.P. 07360, Mexico City, Mexico
fYear
2004
fDate
8-10 Sept. 2004
Firstpage
206
Lastpage
209
Abstract
This work presents a novel motion-detection sensor, based on CMOS technology. It uses floating-gate transistors to perform signal aggregation computation, as part of the centroid approximation, for 1-D real-time tracking of a regular-shape object. In fact, the object is detected from binary images, which are captured within the field of view of this sensor. The analog-weighting process for the spatial column-components, in the associated algorithm, is realized by using MOS transistors operating in the triode region. Only binary images are considered, even though image information is sacrificed, faster operation speed and increased functionality is obtained. The motion-detection sensor was fabricated using a 1.2μm, n-well, CMOS process. The design contains a 17x18 cell-array with a fill-factor is 35.6%. The electrical analysis supported by PSpice of this initial CMOS integrated circuit, demonstrates that its extension to a larger prototype for robotic applications is attractive.
Keywords
CMOS image sensors; CMOS technology; Circuits; Cities and towns; Histograms; Intelligent sensors; Motion detection; Sensor arrays; Sensor systems; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Electronics Engineering, 2004. (ICEEE). 1st International Conference on
Conference_Location
Acapulco, Mexico
Print_ISBN
0-7803-8531-4
Type
conf
DOI
10.1109/ICEEE.2004.1433877
Filename
1433877
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