Title :
Damascene copper integration
Author :
Stamper, A.K. ; Heidenreich, J.E. ; Hubanks, D.C. ; Luce, S.L. ; McDevitt, T.L.
Author_Institution :
IBM Microelectron., Essex Junction, VT, USA
Abstract :
The increase in ratio of wiring RC delay to the intrinsic transistor RC delay is motivating the IC industry to move from subtractive-aluminum to damascene-copper wiring. In addition to having 40% lower sheet resistance, damascene copper has significantly lower resistance and capacitance variability than subtractive-aluminum wiring due to improved reactive ion etch bias control. Damascene copper causes less plasma charging than subtractive-aluminum wiring in wire/via antenna devices and the charging can be modulated by electron shadowing during via RIE
Keywords :
capacitance; copper; delays; electric resistance; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; plasma materials processing; sputter etching; surface charging; Cu; IC industry; capacitance variability; charging modulation; damascene copper; damascene copper process integration; damascene-copper wiring; electron shadowing; intrinsic transistor RC delay; plasma charging; reactive ion etch bias control; resistance variability; sheet resistance; subtractive-aluminum wiring; via RIE; wire/via antenna devices; wiring RC delay; Capacitance; Copper; Delay; Electrons; Etching; Plasma applications; Plasma devices; Shadow mapping; Wire; Wiring;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798841
