Impact of the computational boundary on the coupled thermal and electrical analysis of Si devices

Numerical calculation of submicron silicon MOSFET and surrounding region is performed. Conjugate nature of the thermal and electrical behavior in the device is considered, and the lattice temperature is solved as well as the electron concentration and the electron temperature. Considering both the electron temperature and the lattice temperature is important for the device modeling, for example the electron distribution shows the difference with and without considering the electron temperature. In this research, by extending analysis region, we examine the influence of the computational boundary; this is the first step of modeling the actual device (CMOS structure). The calculated results show the importance of considering not only silicon MOSFET but also surrounding region; the surrounding region has a significant impact on the calculated current density of the source and drain electrode, the maximum lattice temperature and the maximum electron temperature. We discuss the conjugate nature of the thermal and electrical behavior of actual silicon devices for modeling.