Title :
Process-induced damage in a dual-oxide (3.5/6.8 nm) 0.18-μm copper CMOS technology
Author :
Hook, Terence B.
Author_Institution :
Microelectron. Div., IBM Corp., Essex Junction, VT, USA
Abstract :
Charging behaviour for three antenna types (polysilicon, contact array, and via array) is investigated for two oxide thicknesses in a copper back-end-of-line (BEOL) technology. We find that both the thick (6.8 nm) and the thin oxide (3.5 nm) devices are similarly susceptible to charging damage for various processes, except that damage manifests itself as gate leakage on the thin oxide devices, while the thick oxide device shows degradation to hot electron immunity as well as gate leakage
Keywords :
CMOS integrated circuits; copper; dielectric thin films; hot carriers; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; leakage currents; plasma materials processing; sputter etching; surface charging; 0.18 micron; 3.5 nm; 6.8 nm; Cu-SiO2-Si; antenna types; charging behaviour; charging damage; contact array antenna; copper BEOL technology; copper back-end-of-line technology; dual-oxide copper CMOS technology; gate leakage; hot electron immunity degradation; oxide thickness; polysilicon antenna; process-induced damage; thick oxide devices; thin oxide devices; via array antenna; Antenna arrays; Antenna measurements; CMOS process; CMOS technology; Copper; Diodes; Etching; FETs; Gate leakage; Threshold voltage;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798843
