Title :
Charging protection and degradation by antenna environment on NMOS and PMOS transistors
Author :
Carrere, J.-P. ; Heslinga, D.R.
Author_Institution :
Centre Commun, CNET-STMicroelectron.-Philips Semicond., Crolles, France
Abstract :
Plasma induced damage from metal etch and HDP oxide deposition are investigated on CMOS structures for different antenna environments. Grounding the antenna environment provides a good protection for NMOS structures against both of these plasma processes, but is inefficient for PMOS structures. We explain this effect by applying electron-shading results to propose a new qualitative injection model
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; plasma deposition; semiconductor process modelling; sputter etching; CMOS structures; HDP oxide deposition; NMOS structure protection; NMOS transistors; PMOS structures; PMOS transistors; SiO2-Si; antenna environment; antenna environment grounding; charging degradation; charging protection; electron-shading; metal etch; plasma induced damage; plasma processes; qualitative injection model; Degradation; Electron traps; Etching; MOS devices; MOSFETs; Plasma applications; Plasma measurements; Protection; Testing; Voltage;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798844
