DocumentCode
3242956
Title
An architectural leakage power simulator for VHDL structural datapaths
Author
Gopalakrishnan, Chandramouli ; Katkoori, Srinivas
Author_Institution
Dept. of Comput. Sci. & Eng., Univ. of South Florida, Tampa, FL, USA
fYear
2003
fDate
20-21 Feb. 2003
Firstpage
211
Lastpage
212
Abstract
We present a fast RTL leakage power simulator for datapaths described hierarchically in VHDL. Only the leafcells such as full adder NAND gate etc., are characterized for leakage power At the bit-slice level, exhaustive characterization can be performed in reasonable time. We observed that in the transient state, the leakage power is dependent on the previous input as well. This dependence is also incorporated into the leakage model. Using the characterized bit-slice cell library and a given set of inputs, the total leakage energy dissipated in a given datapath is estimated. Compared to HSPICE estimates, the average percentage error for three datapath-intensive designs is 1.38%. The estimation times are reduced by 4-5 orders of magnitude.
Keywords
CMOS digital integrated circuits; VLSI; circuit simulation; hardware description languages; VHDL structural datapaths; architectural leakage power simulator; bit-slice level; characterized bit-slice cell library; datapath-intensive designs; estimation time reduction; fast RTL leakage power simulator; leaf-cells; leakage model; transient state; Circuit simulation; Computational modeling; Computer architecture; Computer science; Libraries; Power engineering and energy; Power measurement; SPICE; Steady-state; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI, 2003. Proceedings. IEEE Computer Society Annual Symposium on
Print_ISBN
0-7695-1904-0
Type
conf
DOI
10.1109/ISVLSI.2003.1183470
Filename
1183470
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