• DocumentCode
    3242956
  • Title

    An architectural leakage power simulator for VHDL structural datapaths

  • Author

    Gopalakrishnan, Chandramouli ; Katkoori, Srinivas

  • Author_Institution
    Dept. of Comput. Sci. & Eng., Univ. of South Florida, Tampa, FL, USA
  • fYear
    2003
  • fDate
    20-21 Feb. 2003
  • Firstpage
    211
  • Lastpage
    212
  • Abstract
    We present a fast RTL leakage power simulator for datapaths described hierarchically in VHDL. Only the leafcells such as full adder NAND gate etc., are characterized for leakage power At the bit-slice level, exhaustive characterization can be performed in reasonable time. We observed that in the transient state, the leakage power is dependent on the previous input as well. This dependence is also incorporated into the leakage model. Using the characterized bit-slice cell library and a given set of inputs, the total leakage energy dissipated in a given datapath is estimated. Compared to HSPICE estimates, the average percentage error for three datapath-intensive designs is 1.38%. The estimation times are reduced by 4-5 orders of magnitude.
  • Keywords
    CMOS digital integrated circuits; VLSI; circuit simulation; hardware description languages; VHDL structural datapaths; architectural leakage power simulator; bit-slice level; characterized bit-slice cell library; datapath-intensive designs; estimation time reduction; fast RTL leakage power simulator; leaf-cells; leakage model; transient state; Circuit simulation; Computational modeling; Computer architecture; Computer science; Libraries; Power engineering and energy; Power measurement; SPICE; Steady-state; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI, 2003. Proceedings. IEEE Computer Society Annual Symposium on
  • Print_ISBN
    0-7695-1904-0
  • Type

    conf

  • DOI
    10.1109/ISVLSI.2003.1183470
  • Filename
    1183470