Title :
Plasma vacuum ultraviolet emission in a high density etcher
Author :
Cismaru, C. ; Shohet, J.L. ; McVittie, P.
Author_Institution :
Center for Plasma-Aided Manuf., Wisconsin Univ., Madison, WI, USA
Abstract :
This work investigates the vacuum ultraviolet (VUV) emission and its impact on SiO2 conductivity in an electron cyclotron resonance (ECR) etcher. Absolute measurements of plasma VUV emission at processing pressures between 0.5 mtorr and 5 mtorr and microwave powers between 700 W and 1300 W show levels of irradiance at the wafer position of the order of tenths of mW/cm2 and integrated photon fluxes in the 1014 photons/cm2s range. In-situ measurements of SiO2 conductivity under direct exposure to the plasma scale with the intensity of the VUV radiation. The measured level of VUV emission from various feed gases is sufficient to induce radiation damage in typical MOS devices in the form of flatband voltage shift and inversion of lightly doped substrates
Keywords :
MOS integrated circuits; dielectric thin films; electrical conductivity; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; plasma materials processing; plasma pressure; sputter etching; ultraviolet radiation effects; 0.5 to 5 mtorr; 700 to 1300 W; ECR etcher; MOS devices; SiO2 conductivity; SiO2-Si; VUV radiation intensity; direct plasma exposure; electron cyclotron resonance etcher; feed gases; flatband voltage shift; high density etcher; in-situ conductivity measurements; integrated photon flux; irradiance; lightly doped substrate inversion; measured VUV emission; microwave power; plasma VUV emission; plasma vacuum ultraviolet emission; processing pressure; radiation damage; vacuum ultraviolet emission; wafer position; Conductivity; Cyclotrons; Electron emission; Etching; Microwave measurements; Plasma applications; Plasma density; Plasma materials processing; Plasma measurements; Resonance;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798846
