Title :
Luminescence tuning in GaN layers
Author :
Sanchez-R., V.M. ; Escobosa, A. ; Navarro, G. ; Avendano, M.A.
Author_Institution :
Seccion de Electronica del Estado Solido, Departamento de Ingenieria Electrica, CINVESTAV, Av. IPN 2508, 07340 Mexico, D.F.
Abstract :
GaN layers were grown at low pressure by nitridation of GaAs substrates. The films showed photoluminescence when excited with ultraviolet light. The luminescence color could be tuned by adjusting the growth parameters.
Keywords :
Fluorescence; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Luminescence; Photoluminescence; Photonic band gap; Radiative recombination; Spontaneous emission; Substrates;
Conference_Titel :
Electrical and Electronics Engineering, 2004. (ICEEE). 1st International Conference on
Conference_Location :
Acapulco, Mexico
Print_ISBN :
0-7803-8531-4
DOI :
10.1109/ICEEE.2004.1433887
