Title :
Low-frequency noise in millimeter-wave Si/SiGe heterojunction bipolar transistors
Author :
Plana, R. ; Van Haaren, B. ; Roux, J.P. ; Escotte, Laurent ; Gruhle, A. ; Dietrich, H. ; Graffeuil, J.
Author_Institution :
Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France
Abstract :
In this paper we report on the low-frequency (LF) noise properties of Si/SiGe HBT´s. Our results indicate that these devices exhibit very interesting LF noise performance which compares well with those obtained for Si BJT´s. However, further improvements of the input referred noise current are still needed and our investigations show that they could be achieved through a reduction of the recombination processes at the emitter-base heterojunction and at the emitter periphery.<>
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device noise; semiconductor materials; silicon; EHF; LF noise properties; MM-wave devices; Si-SiGe; emitter periphery; emitter-base heterojunction; heterojunction bipolar transistors; input referred noise current; low-frequency noise; millimeter-wave HBT; recombination processes; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Microwave devices; Millimeter wave radar; Millimeter wave transistors; Noise generators; Noise reduction; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406241
