Tail-current-less 4.5 kV switching device realizing high frequency operation

Author

Matsushita, Ken-ichi ; Ogura, Tsuneo ; Omura, Ichiro ; Ninomiya, Hideaki ; Ohashi, Hiromichi

Author_Institution

Mat. & Devices Res. Lab., Toshiba Corp., Kawasaki, Japan

fYear

1997

fDate

26-29 May 1997

Firstpage

247

Lastpage

250

Abstract

Tail-current-less 4.5 kV switching is investigated in this work. A device design to obtain tail-current-less switching has been theoretically attained by a detailed analysis concerning stored carrier behavior in n-base during turn-off. A local lifetime control technique has been used to obtain tail-current-less switching. The switching characteristics of the device which applied local lifetime control technique have been simulated by using a simple local lifetime control model. The fabricated device has realized a tail-current-less turn-off switching with peak current of 30 A/cm² and supplied voltage of 2250 V

Keywords

hole density; power semiconductor switches; proton effects; semiconductor device models; semiconductor device reliability; thyristors; 2250 V; 4.5 kV; GTO; high frequency operation; hole density distribution; local lifetime control model; optimized proton irradiation; peak current; power semiconductor devices; stored carrier behavior; switching characteristics; tail-current-less switching; turn-off; Anodes; Cathodes; Circuit simulation; Frequency; Laboratories; Power semiconductor devices; Power semiconductor switches; Static VAr compensators; Switching loss; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601485

Filename

601485