DocumentCode :
3243276
Title :
Tail-current-less 4.5 kV switching device realizing high frequency operation
Author :
Matsushita, Ken-ichi ; Ogura, Tsuneo ; Omura, Ichiro ; Ninomiya, Hideaki ; Ohashi, Hiromichi
Author_Institution :
Mat. & Devices Res. Lab., Toshiba Corp., Kawasaki, Japan
fYear :
1997
fDate :
26-29 May 1997
Firstpage :
247
Lastpage :
250
Abstract :
Tail-current-less 4.5 kV switching is investigated in this work. A device design to obtain tail-current-less switching has been theoretically attained by a detailed analysis concerning stored carrier behavior in n-base during turn-off. A local lifetime control technique has been used to obtain tail-current-less switching. The switching characteristics of the device which applied local lifetime control technique have been simulated by using a simple local lifetime control model. The fabricated device has realized a tail-current-less turn-off switching with peak current of 30 A/cm2 and supplied voltage of 2250 V
Keywords :
hole density; power semiconductor switches; proton effects; semiconductor device models; semiconductor device reliability; thyristors; 2250 V; 4.5 kV; GTO; high frequency operation; hole density distribution; local lifetime control model; optimized proton irradiation; peak current; power semiconductor devices; stored carrier behavior; switching characteristics; tail-current-less switching; turn-off; Anodes; Cathodes; Circuit simulation; Frequency; Laboratories; Power semiconductor devices; Power semiconductor switches; Static VAr compensators; Switching loss; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
ISSN :
1063-6854
Print_ISBN :
0-7803-3993-2
Type :
conf
DOI :
10.1109/ISPSD.1997.601485
Filename :
601485
Link To Document :
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