DocumentCode
3243302
Title
Thermal and electro-mechanical challenges in design and operation of high heat flux processors
Author
Heydari, Ali ; Gektin, Vadim
Author_Institution
Sun Microsyst., Sunnyvale, CA, USA
Volume
2
fYear
2004
fDate
1-4 June 2004
Firstpage
694
Abstract
Many advances in Complementary Metal Oxide Semiconductor (CMOS) technology (deep sub micron feature scales, GHz frequencies, and Silicon On Insulator (SOI)fabrication) have been made possible by increases in the packaging density of electronics. These advances began with the introduction of very large scale integration (VLSI). The combination of increased power dissipation and packaging density led to substantial growth in the chip and system heat fluxes, as well as the amplified complexity in electrical signal integrity and mechanical stackup design in the recent years, particularly in high-end computers. With the trend towards miniaturization, heat removal has become a major bottleneck in product development, especially, in low profile systems, telecom servers and blades. According to ITRS roadmap, power dissipation of high performance single chip packages is predicted to be in 218-288 W range, posing a serious challenge with no proven air-cooled solutions to exist.
Keywords
CMOS integrated circuits; VLSI; cooling; electromechanical effects; elemental semiconductors; integrated circuit design; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; modules; product development; radiofrequency integrated circuits; silicon; silicon-on-insulator; thermal management (packaging); 218 to 288 W; CMOS technology; ITRS roadmap; Si; VLSI; amplified complexity; blades; bottleneck; complementary metal oxide semiconductor technology; deep submicron SOI; deep submicron silicon on insulator; electrical signal integrity; electromechanical effect; heat flux air cooling; heat flux processors; heat removal rate; high end computers; mechanical stackup design; miniaturization; packaging density; power dissipation; product development; single chip packages; telecom servers; thermomechanical effect; very large scale integration; CMOS technology; Cogeneration; Electronic packaging thermal management; Electronics packaging; Frequency; Metal-insulator structures; Power dissipation; Semiconductor device packaging; Silicon on insulator technology; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal and Thermomechanical Phenomena in Electronic Systems, 2004. ITHERM '04. The Ninth Intersociety Conference on
Print_ISBN
0-7803-8357-5
Type
conf
DOI
10.1109/ITHERM.2004.1318356
Filename
1318356
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