DocumentCode :
3243364
Title :
Radiation-stable photovoltaic converters based on In2Te3-type semiconductors
Author :
Gurevich, Y. ; Volovichev, I. ; Logvinov, H. ; Cruz-Irisson, M. ; Espejo-Lopez, G.
Author_Institution :
Departamento de Fisica, CINVESTAV-IPN, Apdo. Postal 14-740, 07000 Mexico, D.F., Mexico
fYear :
2004
fDate :
8-10 Sept. 2004
Firstpage :
303
Lastpage :
304
Abstract :
The perspective of use of radiation-stable semiconductor compounds with loose crystal structures for development of photovoltaic converters is discussed. Use of these semiconductors promises to get low cost solar cells with extremely high radiation stability. A theoretical possibility of creation of photoconverters based on semiconductors of this type is presented. Thin-film heterostructures of intrinsic semiconductors with thickness of the screening length order are shown to have properties, similar to conventional p-n heterojunctions, including photoconverters.
Keywords :
Charge carrier processes; Conductive films; Conductivity; Heterojunctions; Photovoltaic systems; Semiconductor films; Semiconductor materials; Solar power generation; Solid state circuits; Stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Electronics Engineering, 2004. (ICEEE). 1st International Conference on
Conference_Location :
Acapulco, Mexico
Print_ISBN :
0-7803-8531-4
Type :
conf
DOI :
10.1109/ICEEE.2004.1433898
Filename :
1433898
Link To Document :
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