Title :
Power supply current detectability of SRAM defects
Author :
Liu, Jian ; Makki, Rafic
Author_Institution :
Dept. of Electr. Eng., North Carolina Univ., Charlotte, NC, USA
Abstract :
We investigate correlations between SRAM cell defects and power supply current including IDDQ (peak value of quiescent power supply current) and iDDT (transient power supply current). Our results show that the power supply current can be used to detect cell shorts, cell opens, and disturb-type pattern sensitivity. We also investigate the effect of total current leakage in the power supply, which is proportional to SRAM size, on the power supply current detectability of SRAM cell defects. We present limits (obtained from simulation) on current detectability of SRAM cell defects as a function of normal power supply current leakage
Keywords :
SRAM chips; electric current measurement; fault currents; fault diagnosis; leakage currents; power supply circuits; short-circuit currents; transients; IDDQ; SRAM cell; SRAM defects; SRAM size; current detectability; disturb-type pattern sensitivity; iDDT; large circuit effects; open defects; physical defect; power supply current; power supply current detectability; quiescent power supply current; shorts; simulation; total current leakage; transient power supply current; Circuit simulation; Circuit testing; Current measurement; Current supplies; Leak detection; Power measurement; Power supplies; Pulse circuits; Random access memory; Switching circuits;
Conference_Titel :
Test Symposium, 1995., Proceedings of the Fourth Asian
Conference_Location :
Bangalore
Print_ISBN :
0-8186-7129-7
DOI :
10.1109/ATS.1995.485362
