Abstract :
GaAs IC technology offers many advantages in wireless communication products. The higher electron mobility of the GaAs FETs results in better performance and conversion efficiency. When operating voltage of future communication products is lowered, GaAs FETs will have significant advantage over the silicon devices. The introduction of GaAs MESFET, HFET, and HBT into wireless communications equipment increased the performance level of RF power functions. Fully monolithic single chip GaAs MMIC down converter was designed, fabricated and characterized for application in a portable communication system. The extremely low power-dissipation, high level of integration, and very good RF performance of GaAs MMIC make it an ideal candidate for low power receivers used in portable communications systems. A significant improvement in DC to RF conversion efficiency was achieved. The higher production volumes and demand for increased talk time or battery life of the cellular products have led to the introduction of GaAs RF power amplifier for the last output stage
