Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

Author

Grassi, Roberto ; Gnudi, A. ; Di Lecce, Valerio ; Gnani, Elena ; Reggiani, S. ; Baccarani, G.

Author_Institution

E. De Castro Adv. Res. Center on Electron. Syst., Univ. of Bologna, Bologna, Italy

Volume

61

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

617

Lastpage

624

Abstract

Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene field-effect transistors in the bias region of negative output differential resistance. We show that, compared with the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5-3 and the need for a careful circuit stabilization.

Keywords

field effect transistors; graphene; negative resistance; bias region; field effect transistor; high voltage gains; maximum oscillation frequency; monolayer graphene FET; negative output differential resistance; quantum transport simulation; quasi saturation region; Circuit stability; Gain; Graphene; Logic gates; Radio frequency; Resistance; Stability analysis; Graphene field-effect transistor (GFET); negative differential resistance (NDR); terahertz operation; voltage amplifier;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2294113

Filename

6689297