Title :
A He-irradiated IGBT with a shallow p-base and shallow FLRs
Author :
Kushida, T. ; Mase, A. ; Kawahashi, A. ; Ono, K.
Author_Institution :
Toyota Motor Corp., Aichi, Japan
Abstract :
A trade-off between a low forward voltage and fast switching time is a very important characteristic for an insulated gate bipolar transistor (IGBT) that is used in applications such as inverters for motor control. A trench-IGBT has a very good trade-off but has a high cost because of the complicated structure. This study presents our new development of a 600 V planar-IGBT that has a trade-off characteristic comparable to that of a trench-IGBT. This has been realized by employing a device structure with a shallow p-base and shallow FLRs, and by using local lifetime control through He irradiation
Keywords :
carrier lifetime; insulated gate bipolar transistors; ion beam effects; 600 V; He; He irradiation; forward voltage; insulated gate bipolar transistor; inverter; local lifetime control; motor control; planar-IGBT; shallow FLR; shallow p-base; switching time; Breakdown voltage; Costs; Electrons; Epitaxial layers; Helium; Insulated gate bipolar transistors; Inverters; Low voltage; Motor drives; Substrates;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601492
