DocumentCode :
3244855
Title :
Simulation of the velocity distribution for immersion lithography
Author :
Chen, Hui ; Chen, Wenyu ; Zou, Jun ; Ruan, Xiaodong ; Fu, Xin
Author_Institution :
State Key Lab. of Fluid Power Transm. & Control, Univ. of Zhejiang, Hangzhou, China
fYear :
2009
fDate :
14-17 July 2009
Firstpage :
1566
Lastpage :
1571
Abstract :
Immersion lithography has been accepted as a method for improving optical lithography resolution to 45 nm, and allows improved resolution without a large shift in infrastructure. The premise behind the concept is to increase the refraction index in the space between the lens and resist-coated wafer by insertion of a high refractive index liquid in place of the low refractive index air that currently fills the gap, and the liquid must maintain a high uniform optical quality. However, the immersion liquid within the gap has to be updated as substances such as photo acid generators (PAGs) and bubbles, may affect the optical quality of the liquid. The efficiency of the contaminant elimination mainly depends on flow conditions, especially velocity distribution of flow field under lens region. Three-dimensional (3-D) computational fluid dynamics (CFD) models of the fluid between the lens and wafer are developed using the software Fluent and used to investigate the velocity distribution between the lens and wafer, considering fluid injection pressure, dispense ports quantity and wafer scanning velocities. Moreover, the numerical results are compared with experimental results.
Keywords :
computational fluid dynamics; immersion lithography; photoresists; refractive index; immersion lithography; liquid optical quality; optical lithography resolution; photo acid generators; refraction index; resist-coated wafer; size 45 nm; three-dimensional computational fluid dynamics models; velocity distribution; wafer scanning velocity; Computational fluid dynamics; Contamination; Integrated circuit technology; Lenses; Lithography; Mechatronics; Optical refraction; Optical variables control; Refractive index; Semiconductor device modeling; Immersion lithography; Simulation; Velocity distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Intelligent Mechatronics, 2009. AIM 2009. IEEE/ASME International Conference on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2852-6
Type :
conf
DOI :
10.1109/AIM.2009.5229846
Filename :
5229846
Link To Document :
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