Title :
A novel 30 V p-channel trench gate power MOSFET with ultra low on-state-resistance at low-gate-voltage
Author :
Narazaki, A. ; Hisamoto, Y. ; Tadokoro, C. ; Takeda, Masanori ; Hagino, H.
Author_Institution :
Fukuryo Semicon. Eng. Group, Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
This paper reports an ultra low on-state-resistance p-channel power MOSFET without deterioration of the gate breakdown voltage. This p-channel MOSFET has a trench gate structure and an optimized channel structure. These effects make the channel resistance small without thinning of the gate oxide thickness, therefore it is possible for the total chip resistance to be reduced. As a result at BVDSS=42 V, this p-ch MOSFET exhibits an active area specific on-resistance RDS(on) A=1.5 mΩcm2 (at VGS-Vth=2 V), 1.8 mΩcm2 (at VGS-Vth=1.5 V), it remains 20 V of the maximum voltage applicable between gate and source
Keywords :
electric breakdown; electric resistance; power MOSFET; 30 V; gate breakdown voltage; low-gate-voltage; optimized channel structure; p-channel device; trench gate power MOSFET; ultra low on-state-resistance; Batteries; Design optimization; Electric resistance; Electrodes; Etching; MOSFET circuits; Metalworking machines; Power MOSFET; Power engineering and energy; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601495
