Effect of Nonuniformities of Microstructure and Electrical Property of Grain Boundary to the Global Electrical Characteristics

Author

Tu, Youping ; Ding, Lijian ; He, Jinliang ; Hu, Jun ; Zeng, Rong

Author_Institution

Dept. of Electr. Eng., North China Electr. Power Univ., Baoding

fYear

2006

fDate

38869

Firstpage

95

Lastpage

98

Abstract

The influence of the geometry and topology of the granular microstructure, as well as the properties and the distribution of the different types of microjunctions on the features of bulk varistor devices is an important and interesting problem. Simulating analysis on the actual microstructure and electrical characteristics of ZnO varistors is used to effectively analyze the influences of different factors, such as grain size, barrier voltage and nonlinearity coefficient of single grain boundary, on the global electrical characteristics, and the effect of their distribution related to the nonuniformities of ZnO varistors was considered. The current concentration and dumb grains lead to the nonuniform of current distribution, and the energy handling capability of ZnO varistor is reduced

Keywords

II-VI semiconductors; grain boundaries; grain size; granular structure; varistors; wide band gap semiconductors; zinc compounds; ZnO; barrier voltage; bulk varistor devices; current concentration; electrical property; geometry; grain boundary; grain size; granular microstructure; microjunctions; nonlinearity coefficient; topology; Analytical models; Electric variables; Geometry; Grain boundaries; Grain size; Microstructure; Topology; Varistors; Voltage; Zinc oxide; ZnO varistor; electrical characteristics; grain boundary; nonuniformity;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and applications of Dielectric Materials, 2006. 8th International Conference on

Conference_Location

Bali

Print_ISBN

1-4244-0189-5

Electronic_ISBN

1-4244-0190-9

Type

conf

DOI

10.1109/ICPADM.2006.284126

Filename

4062615