DocumentCode
3246567
Title
Temperature and dispersion effect extentions of Chalmers nonlinear HEMT and MESFET model
Author
Angelov, Iltcho ; Bengtsson, L. ; Garcia, M.A.
Author_Institution
Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden
fYear
1995
fDate
16-20 May 1995
Firstpage
1515
Abstract
Temperature and dispersion effects have been investigated and included in the Chalmers nonlinear model for HEMTs and MESFETs. DC, pulsed DC, low frequency (10 Hz-10 MHz), RF and small signal S-parameter measurements (1-18 GHz) have been made on a large number of HEMT and MESFET devices from different manufacturers in the temperature range 17-400 K in order to evaluate the model.<>
Keywords
S-parameters; Schottky gate field effect transistors; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; 10 Hz to 18 GHz; 17 to 400 K; Chalmers nonlinear model; HEMT model; MESFET model; RF S-parameters; dispersion effects; small signal S-parameters; temperature effects; Dispersion; Frequency measurement; HEMTs; MESFETs; MODFETs; Pulse measurements; RF signals; Radio frequency; Scattering parameters; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.406262
Filename
406262
Link To Document