DocumentCode
3246643
Title
Inversion layer emitter devices for HV ICs
Author
Udrea, Florin ; Amaratunga, Gehan A J
Author_Institution
Dept. of Eng., Cambridge Univ., UK
fYear
1997
fDate
26-29 May 1997
Firstpage
305
Lastpage
308
Abstract
Novel device structures termed Lateral Inversion Layer Emitter Transistors (LILETs) for HVICs are proposed and demonstrated numerically and experimentally. These structures are based on the use of the inversion layer as a minority carrier injector. Thus, the transistor or thyristor emitter is formed by a surface inversion layer as opposed to the classical concept of a permanent diffused emitter
Keywords
inversion layers; minority carriers; power MOSFET; power integrated circuits; power semiconductor devices; HV ICs; LILET; inversion layer emitter devices; lateral power transistors; minority carrier injector; surface inversion layer; Bipolar transistors; Electrons; FETs; Impedance; MOSFET circuits; Physics; Semiconductor diodes; Substrates; Threshold voltage; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location
Weimar
ISSN
1063-6854
Print_ISBN
0-7803-3993-2
Type
conf
DOI
10.1109/ISPSD.1997.601501
Filename
601501
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