Title :
A 4-bit SiGe passive phase shifter for X-band phased arrays
Author :
Kalyoncu, I. ; Ozeren, Emre ; Kaynak, Mehmet ; Gurbuz, Yasar
Author_Institution :
Fac. of Eng. & Natural Sci. - FENS, Sabanci Univ., Istanbul, Turkey
Abstract :
This paper presents a 4-bit passive phase shifter for X-band (8-12 GHz) phased-arrays, implemented in 0.25-μm SiGe BiCMOS process. All bits are digitally controlled. The 22.5° and 45° bits are based on switched low-pass network while the 90° and 180° bits are based on switching between high-pass/low-pass filters. Filters are implemented using on-chip spiral inductors and high-Q MIM capacitors. Switching functionality is obtained by isolated NMOS transistors employing resistive body floating technique. All bits are optimized to minimize the RMS phase error. Ordering of bits is optimized so as to minimize the overall insertion loss. Simulated insertion loss is 12±2 dB and RMS phase error is less than 2° over X-band frequencies.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIM devices; high-pass filters; inductors; low-pass filters; microwave filters; microwave phase shifters; BiCMOS process; NMOS transistors; SiGe; X-band phased arrays; frequency 8 GHz to 12 GHz; high-Q MIM capacitors; high-pass filter; insertion loss; low pass network; low-pass filter; on-chip spiral inductors; passive phase shifter; resistive body floating technique; size 0.25 mum; storage capacity 4 bit; BiCMOS integrated circuits; Frequency measurement; Insertion loss; Loss measurement; Phase measurement; Phase shifters; Silicon germanium; Phase shifter; SiGe BiCMOS; T/R module; X-band; phased array;
Conference_Titel :
Biomedical Wireless Technologies, Networks, and Sensing Systems (BioWireleSS), 2013 IEEE Topical Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-2930-9
DOI :
10.1109/BioWireleSS.2013.6613699
