Through silicon via process characterization by integrated inspection/metrology solutions in visible and infrared domain

Author

Devanciard, Nicolas ; Rey, Stephane ; Magis, Thomas ; Minoret, Stephane ; Beitia, Carlos ; Alliata, Dario ; Marx, David ; Bachiraju, Prasad ; Hart, Darcy ; Thornell, John ; Dudley, Russ

Author_Institution

LETI, CEA, Grenoble, France

fYear

2015

fDate

3-6 May 2015

Firstpage

90

Lastpage

95

Abstract

In this paper, we present an integrated in-line solution, combining automatic visual inspection/classification with unique 2D/3D measurement technologies, which was used to characterize the defectivity and the morphology of open through silicon via (TSV) structures. The measurements were performed on 300mm Si wafers hosting several populations of via with diameter varied from 5 to 20 micron, and target aspect ratio from 1:8 to 1:20. Interferometry techniques coupled with high resolution cameras working in white light and infrared domains were used to demonstrate TSV process control in R&D and high volume manufacturing environments.

Keywords

inspection; integrated circuit manufacture; integrated circuit measurement; interferometry; process control; silicon; three-dimensional integrated circuits; 2D measurement technology; 3D measurement technology; R and D; Si; TSV process control; automatic visual inspection; defectivity characterization; high resolution camera; infrared domain; integrated inspection; integrated metrology solution; interferometry technique; open TSV morphology; silicon wafer; through silicon via process characterization; visible domain; white light; Cameras; Inspection; Metrology; Optical interferometry; Silicon; Sociology; Statistics;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI

Conference_Location

Saratoga Springs, NY

Type

conf

DOI

10.1109/ASMC.2015.7164457

Filename

7164457