DocumentCode :
3247346
Title :
Yield improvement in dense EEPROM by bit mapping and experimental design
Author :
Agam, Moshe ; Menon, Santosh ; Cosmin, Peter
Author_Institution :
Technol. Dev. Dept., ON Semicond., Gresham, OR, USA
fYear :
2015
fDate :
3-6 May 2015
Firstpage :
237
Lastpage :
240
Abstract :
This paper demonstrates how combined activities of bit mapping of dense EEPROM array, layout overlay, and failure analysis can lead to experimental design to improve yield. In this methodology a complicated detection of failing bits in a large array is transformed to multi variable design with simple detection. Specifically, it describes the process of detection of word line failures caused by salicide voids and how a simple test chip and experimental design can bring this problem to resolution.
Keywords :
EPROM; failure analysis; integrated circuit yield; logic design; EEPROM; bit mapping; failure analysis; layout overlay; yield improvement; Arrays; EPROM; Failure analysis; Implants; Layout; Monitoring; Random access memory; Bit mapping; EEPROM; SRAM; memory array; poly doping; poly resistors; salicide; salicide breaks; word line;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI
Conference_Location :
Saratoga Springs, NY
Type :
conf
DOI :
10.1109/ASMC.2015.7164478
Filename :
7164478
Link To Document :
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