• DocumentCode
    3247346
  • Title

    Yield improvement in dense EEPROM by bit mapping and experimental design

  • Author

    Agam, Moshe ; Menon, Santosh ; Cosmin, Peter

  • Author_Institution
    Technol. Dev. Dept., ON Semicond., Gresham, OR, USA
  • fYear
    2015
  • fDate
    3-6 May 2015
  • Firstpage
    237
  • Lastpage
    240
  • Abstract
    This paper demonstrates how combined activities of bit mapping of dense EEPROM array, layout overlay, and failure analysis can lead to experimental design to improve yield. In this methodology a complicated detection of failing bits in a large array is transformed to multi variable design with simple detection. Specifically, it describes the process of detection of word line failures caused by salicide voids and how a simple test chip and experimental design can bring this problem to resolution.
  • Keywords
    EPROM; failure analysis; integrated circuit yield; logic design; EEPROM; bit mapping; failure analysis; layout overlay; yield improvement; Arrays; EPROM; Failure analysis; Implants; Layout; Monitoring; Random access memory; Bit mapping; EEPROM; SRAM; memory array; poly doping; poly resistors; salicide; salicide breaks; word line;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI
  • Conference_Location
    Saratoga Springs, NY
  • Type

    conf

  • DOI
    10.1109/ASMC.2015.7164478
  • Filename
    7164478