DocumentCode
3247346
Title
Yield improvement in dense EEPROM by bit mapping and experimental design
Author
Agam, Moshe ; Menon, Santosh ; Cosmin, Peter
Author_Institution
Technol. Dev. Dept., ON Semicond., Gresham, OR, USA
fYear
2015
fDate
3-6 May 2015
Firstpage
237
Lastpage
240
Abstract
This paper demonstrates how combined activities of bit mapping of dense EEPROM array, layout overlay, and failure analysis can lead to experimental design to improve yield. In this methodology a complicated detection of failing bits in a large array is transformed to multi variable design with simple detection. Specifically, it describes the process of detection of word line failures caused by salicide voids and how a simple test chip and experimental design can bring this problem to resolution.
Keywords
EPROM; failure analysis; integrated circuit yield; logic design; EEPROM; bit mapping; failure analysis; layout overlay; yield improvement; Arrays; EPROM; Failure analysis; Implants; Layout; Monitoring; Random access memory; Bit mapping; EEPROM; SRAM; memory array; poly doping; poly resistors; salicide; salicide breaks; word line;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI
Conference_Location
Saratoga Springs, NY
Type
conf
DOI
10.1109/ASMC.2015.7164478
Filename
7164478
Link To Document