Title :
MESFET linearity improvement by channel doping control
Author_Institution :
Dept. de Electron. e Telecoms, Aveiro Univ., Portugal
Abstract :
The present work is intended to evaluate the linearity that can be provided by general purpose MESFETs. By a simple physics-based analysis, and a practical amplifier design, it will be proved that educated device and bias point selection, can approximate IMD performance of normal channel doping profiles, to the one that would be expected from a MESFET device with a specially tailored doping profile.<>
Keywords :
Schottky gate field effect transistors; doping profiles; intermodulation distortion; microwave amplifiers; microwave circuits; microwave field effect transistors; semiconductor doping; IMD performance; MESFET linearity; amplifier design; bias point selection; channel doping control; doping profiles; physics-based analysis; Communication system control; Doping profiles; FETs; Intermodulation distortion; Intrusion detection; Linearity; MESFETs; Nonlinear distortion; Performance analysis; Telecommunication control;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406265
