A model-adaptable MOSFET parameter extraction system

Author

Kondo, Masaki ; Onodera, Hidetoshi ; Tamaru, Keikichi

Author_Institution

Dept. of Electron., Kyoto Univ., Japan

fYear

1995

fDate

29 Aug-1 Sep 1995

Firstpage

373

Lastpage

377

Abstract

A model-adaptable parameter extraction system is developed to catch up with rapid development of new advanced MOSFET models. The model-adaptability relies on two techniques; a model-adaptable initial value estimation method and a design environment that stores and reuses extraction procedures. The system makes it easy to develop an extraction procedure for a new MOSFET model through the reuse of an existing procedure for a previous model. We have verified that the system can accommodate major SPICE models including Level2-3 and BSIM1-3

Keywords

MOSFET; electronic engineering computing; initial value problems; parameter estimation; semiconductor device models; BSIM1-3; Level2-3; MOSFET; MOSFET model; MOSFET models; SPICE models; initial value estimation; model-adaptable parameter extraction; parameter extraction; Circuit simulation; Costs; Curve fitting; Design methodology; Intrusion detection; MOSFET circuits; Parameter estimation; Parameter extraction; SPICE; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Automation Conference, 1995. Proceedings of the ASP-DAC '95/CHDL '95/VLSI '95., IFIP International Conference on Hardware Description Languages. IFIP International Conference on Very Large Scal

Conference_Location

Chiba

Print_ISBN

4-930813-67-0

Type

conf

DOI

10.1109/ASPDAC.1995.486248

Filename

486248