Title :
BSIM model for circuit design using advanced technologies
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
BSIM (Berkeley Short-channel IGFET Model) enables circuit designers to accurately simulate CMOS circuits by including gate tunneling, quantum effect, and RF effects. BPTM (Berkeley Predictive Technology Model) provides circuit designers with customized model cards for future technologies for exploratory circuit design and research.
Keywords :
CMOS integrated circuits; circuit CAD; circuit simulation; insulated gate field effect transistors; integrated circuit design; tunnelling; BPTM; BSIM model; Berkeley predictive technology model; Berkeley short-channel IGFET model; CMOS circuits; RF effects; circuit design; customized model cards; exploratory circuit design; gate tunneling; quantum effect; 1f noise; CMOS technology; Circuit simulation; Circuit synthesis; MOSFET circuits; Predictive models; Radio frequency; Semiconductor device modeling; Tunneling; Voltage;
Conference_Titel :
VLSI Circuits, 2001. Digest of Technical Papers. 2001 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-014-3
DOI :
10.1109/VLSIC.2001.934176
