• DocumentCode
    3247716
  • Title

    BSIM model for circuit design using advanced technologies

  • Author

    Chenming Hu

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • fYear
    2001
  • fDate
    14-16 June 2001
  • Firstpage
    5
  • Lastpage
    10
  • Abstract
    BSIM (Berkeley Short-channel IGFET Model) enables circuit designers to accurately simulate CMOS circuits by including gate tunneling, quantum effect, and RF effects. BPTM (Berkeley Predictive Technology Model) provides circuit designers with customized model cards for future technologies for exploratory circuit design and research.
  • Keywords
    CMOS integrated circuits; circuit CAD; circuit simulation; insulated gate field effect transistors; integrated circuit design; tunnelling; BPTM; BSIM model; Berkeley predictive technology model; Berkeley short-channel IGFET model; CMOS circuits; RF effects; circuit design; customized model cards; exploratory circuit design; gate tunneling; quantum effect; 1f noise; CMOS technology; Circuit simulation; Circuit synthesis; MOSFET circuits; Predictive models; Radio frequency; Semiconductor device modeling; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 2001. Digest of Technical Papers. 2001 Symposium on
  • Conference_Location
    Kyoto, Japan
  • Print_ISBN
    4-89114-014-3
  • Type

    conf

  • DOI
    10.1109/VLSIC.2001.934176
  • Filename
    934176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3247716