A short loop SLIC in a submicron BiCMOS technology

Author

Aliahmad, Mehran ; Salama, C. Andre T

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

fYear

1997

fDate

26-29 May 1997

Firstpage

329

Lastpage

332

Abstract

This paper presents the high voltage building blocks of a Subscriber Line Interface Circuit (SLIC), designed for short loop applications. The circuits are implemented in a 5 V 0.8 μm BiCMOS process using high voltage extended-drain MOS transistors, fully compatible with the low voltage technology. According to the short loop requirements, this SLIC is designed to operate with a 30 V power supply and have 30 mA loop driving capability With less than 1 mm² area and 70 mW idle power, this circuit can be easily integrated with high-density low-voltage circuits to implement a single chip SLIC

Keywords

BiCMOS integrated circuits; driver circuits; power integrated circuits; subscriber loops; 0.8 micron; 30 V; 30 mA; 5 V; 70 mW; HV extended-drain MOSFETs; short loop SLIC; single chip SLIC; submicron BiCMOS technology; subscriber line interface circuit; BiCMOS integrated circuits; Central office; Copper; Driver circuits; Feeds; Low voltage; MOS devices; Optical fiber communication; Power supplies; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601508

Filename

601508