• DocumentCode
    3248865
  • Title

    Fundamental approach to the storage of energy in dielectrics

  • Author

    Blaise, G.

  • Author_Institution
    Lab. de Phys. des Solides, Univ. de Paris-Sud, Orsay, France
  • fYear
    1995
  • fDate
    10-13 Jul 1995
  • Firstpage
    324
  • Lastpage
    328
  • Abstract
    The classic approach to the storage of energy in dielectrics and their degradation does not consider the fact that charge injection and charge trapping always occur in capacitors subjected to high electric fields. In fact, when a charge is trapped in an insulating material and localized at an atomic scale, a quasi static polarization is induced, producing a local increase of the internal energy of the order of 5 to 10 eV. This change of the internal energy affects all the thermal properties of the material. Under certain circumstances this energy reaches a level so high that it constitutes a reservoir of energy sufficient to produce irreversible damage of the material when it is released after charges are detrapped
  • Keywords
    MOS capacitors; electric breakdown; electron traps; energy storage; hole traps; space charge; MOS capacitors; charge injection; charge trapping; degradation; detrapping; dielectrics; energy storage; high electric fields; insulating material; internal energy; irreversible damage; quasi static polarization; thermal properties; Degradation; Dielectric materials; Dielectrics and electrical insulation; Electromagnetic fields; Electron traps; Energy storage; Lattices; MOS capacitors; Polarization; Reservoirs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Conduction and Breakdown in Solid Dielectrics, 1995. ICSD'95., Proceedings of the 1995 IEEE 5th International Conference on
  • Conference_Location
    Leicester
  • Print_ISBN
    0-7803-2040-9
  • Type

    conf

  • DOI
    10.1109/ICSD.1995.523002
  • Filename
    523002