Title :
A 0.1–6 GHz inductorless differential common gate LNA
Author :
Cen Chen ; Rong Zhang ; Zhi Li ; Shengxi Diao ; Fujiang Lin
Author_Institution :
Dept. of Electron. Sci. & Technol., Univ. of Sci. & Technol. of China(USTC), Hefei, China
fDate :
March 30 2015-April 1 2015
Abstract :
A 0.1-6 GHz fully differential common gate low noise amplifier (CGLNA) is proposed in this paper. High equivalent transconductance (gm) is realized with active transconductance-boosting with cross coupling capacitance. By introducing a positive feedback path in active transconductance-boosting circuit, this circuit increases freedom of transconductance, thus alleviates the trade-off between input matching and noise performance. It also improves the noise performance and realizes the high gain under low power consumption. The circuit is implemented in 40nm CMOS process. From the post-layout simulation, this circuit shows 13 dB gain with a 3-dB bandwidth of 4.4 GHz. It achieves a simulation NF of 3 dB at 1 GHz. And the input-referred third-order intercept (IIP3) value is -15.59dBm. The power consumption is 3.6mW from 1V supply.
Keywords :
CMOS integrated circuits; low noise amplifiers; CGLNA; CMOS process; active transconductance-boosting circuit; bandwidth 4.4 GHz; cross coupling capacitance; frequency 0.1 GHz to 6 GHz; fully differential common gate low noise amplifier; gain 13 dB; inductorless differential common gate LNA; noise figure 3 dB; post-layout simulation; power 3.6 mW; voltage 1 V; Bandwidth; CMOS integrated circuits; Gain; Impedance; Impedance matching; Logic gates; Noise; CGLNA; Inductor-less; active gm-boosted; positive feedback;
Conference_Titel :
Wireless Symposium (IWS), 2015 IEEE International
Conference_Location :
Shenzhen
DOI :
10.1109/IEEE-IWS.2015.7164541