Title :
Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FETs
Author :
Filicori, Fabio ; Vannini, Giorgio ; Santarelli, Alberto ; Mediavilla, Angel ; Tazon, A. ; Newport, Y.
Author_Institution :
Dipartimento di Elettronica Inf. e Sistemistica, Bologna Univ., Italy
Abstract :
An empirical approach is proposed which accounts for low-frequency dispersive phenomena due to surface state densities, deep level traps and device heating, in the modeling of the drain current response of III-V FETs. The model, which is based on mild assumptions justified both by theoretical considerations and experimental results, has been applied to GaAs MESFETs of different manufacturers. Experimental and simulation results that confirm the validity of the model are provided in the paper.<>
Keywords :
III-V semiconductors; deep levels; electron traps; field effect transistors; hole traps; semiconductor device models; surface states; GaAs; III-V FETs; MESFETs; deep level traps; device heating; drain current response; low-frequency dispersive effects; modeling; surface state densities; thermal phenomena; Context modeling; Dispersion; Electron devices; Electron traps; FETs; Frequency; Gallium arsenide; III-V semiconductor materials; Integrated circuit modeling; Mathematical model;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406272
