Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FETs

Author

Filicori, Fabio ; Vannini, Giorgio ; Santarelli, Alberto ; Mediavilla, Angel ; Tazon, A. ; Newport, Y.

Author_Institution

Dipartimento di Elettronica Inf. e Sistemistica, Bologna Univ., Italy

fYear

1995

fDate

16-20 May 1995

Firstpage

1557

Abstract

An empirical approach is proposed which accounts for low-frequency dispersive phenomena due to surface state densities, deep level traps and device heating, in the modeling of the drain current response of III-V FETs. The model, which is based on mild assumptions justified both by theoretical considerations and experimental results, has been applied to GaAs MESFETs of different manufacturers. Experimental and simulation results that confirm the validity of the model are provided in the paper.<>

Keywords

III-V semiconductors; deep levels; electron traps; field effect transistors; hole traps; semiconductor device models; surface states; GaAs; III-V FETs; MESFETs; deep level traps; device heating; drain current response; low-frequency dispersive effects; modeling; surface state densities; thermal phenomena; Context modeling; Dispersion; Electron devices; Electron traps; FETs; Frequency; Gallium arsenide; III-V semiconductor materials; Integrated circuit modeling; Mathematical model;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406272

Filename

406272