DocumentCode :
3249426
Title :
RF IC simulation: state-of-the-art and future trends
Author :
Kevenaar, Tom A M ; ter Maten, E.J.W.
Author_Institution :
ED&T/Analogue Simulation, Philips Res. Lab., Eindhoven, Netherlands
fYear :
1999
fDate :
1999
Firstpage :
7
Lastpage :
10
Abstract :
The change from mainly professional wireless applications to a consumer market has severe implications for the total design process. Where in the past there was time to build and measure several prototypes, nowadays the demands on time-to-market, time-to-quality, price, production volume, etc. are so severe that designers have to resort to simulation. In a marketing window of only a few months there clearly is no time for several iterations of these systems-on-silicon. Although the RF part of these systems constitutes only a minor part of the total design area, it presents a major challenge in the total design cycle. This challenge is caused not only by the analogue/RF nature of the design but also by the lack of appropriate tools, models and design flows. Because the demand for RF simulation tools on this scale is relatively new, the developments of tools (the underlying principles and the commercial implementation there of) are lagging behind the designers´ needs. It is clear that we are only in the start-up phase of RF tooling and RF design flow development. Nevertheless, recently a lot of progress has been made in the research of mathematical principles for RF simulation. A number of these new ideas are already available in commercial software. This paper deals with an overview of principles of RF simulation, zooms in on the current limitations of the methods and discusses some anticipated future directions
Keywords :
circuit simulation; integrated circuit modelling; integrated circuit noise; radio equipment; reviews; RF IC simulation; RF building blocks; design flow development; future trends; nonlinear behaviour; open problems; overall noise; phase noise; simulation principles; simulation tools; software implementation; 1f noise; Baseband; Circuit simulation; Computer networks; Integrated circuit modeling; Narrowband; RF signals; Radio frequency; Radiofrequency integrated circuits; Working environment noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
Type :
conf
DOI :
10.1109/SISPAD.1999.799246
Filename :
799246
Link To Document :
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