Sub-0.1 μm device simulation technology: another problem for Monte Carlo simulations

A brief overview of unsolved issues for sub-0.1 μm Si-MOSFETs that are appropriate to be tackled by the Monte Carlo method is presented. Also, our recent results of the Monte Carlo studies on the dynamical and intrinsic current fluctuations in Si-MOSFETs are presented. It is demonstrated that, as the number of the channel electrons decreases, the normalized standard deviation of the current variance attains a significant fraction of the averaged drain current when the device width is reduced into deep sub-μm. It is also shown that this current fluctuation mainly results from the thermal noise in the heavily-doped source and drain regions and, consequently, is nearly independent of the supply drain voltage