Simple phase-space trajectory calculation for Monte Carlo device simulation including screened impurity scattering

Author

Bufler, F.M. ; Yoder, P.D. ; Fichtuer, W.

Author_Institution

Inst. fur Integrierte Syst., Eidgenossische Tech. Hochschule, Zurich, Switzerland

fYear

1999

fDate

1999

Firstpage

31

Lastpage

34

Abstract

A phase-space-step trajectory calculation within the scheme of self-scattering is presented. In addition, impurity scattering is approximated by the inverse microscopic relaxation time of the Ridley model. The resulting Monte Carlo algorithm is faster by a factor in the order of 15 than one, which integrates the equations of motion via a second-order Runge-Kutta technique and treats impurity scattering rigorously

Keywords

MOSFET; Monte Carlo methods; Newton method; Runge-Kutta methods; electronic engineering computing; impurity scattering; phase space methods; semiconductor device models; MOSFET; Monte Carlo device simulation; Newton´s equations of motion; Ridley model; ballistic transport; drain currents; fast Monte Carlo algorithm; inverse microscopic relaxation time; phase-space trajectory calculation; screened impurity scattering; second-order Runge-Kutta technique; self-scattering scheme; Ballistic transport; Computational modeling; Doping profiles; Electrons; Impurities; MOSFET circuits; Microscopy; Monte Carlo methods; Particle scattering; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on

Conference_Location

Kyoto

Print_ISBN

4-930813-98-0

Type

conf

DOI

10.1109/SISPAD.1999.799252

Filename

799252