Title :
A computationally efficient method for three-dimensional simulation of ion implantation
Author :
Burenkov, A. ; Tietzel, K. ; Hössinger, A. ; Lorenz, J. ; Ryssel, H. ; Selberherr, S.
Author_Institution :
Fraunhofer Inst. fur Integrierte Schaltungen, Bauelementetechnol., Erlangen, Germany
Abstract :
The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods, with the disadvantage of very long simulation times especially for three-dimensional applications. In this work a new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested. The approach is based on a combination of the algorithmic capabilities of fast analytical and the Monte-Carlo simulation methods
Keywords :
Monte Carlo methods; ion implantation; semiconductor process modelling; CPU time efficiency; Monte-Carlo simulation; computationally efficient method; ion implantation; long simulation times; process simulation; three-dimensional simulation; Algorithm design and analysis; Analytical models; Computational modeling; Convolution; Crystallization; Distribution functions; Doping profiles; Ion beams; Ion implantation; Microelectronics;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799258
