A computationally efficient method for three-dimensional simulation of ion implantation

Author

Burenkov, A. ; Tietzel, K. ; Hössinger, A. ; Lorenz, J. ; Ryssel, H. ; Selberherr, S.

Author_Institution

Fraunhofer Inst. fur Integrierte Schaltungen, Bauelementetechnol., Erlangen, Germany

fYear

1999

fDate

1999

Firstpage

55

Lastpage

58

Abstract

The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods, with the disadvantage of very long simulation times especially for three-dimensional applications. In this work a new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested. The approach is based on a combination of the algorithmic capabilities of fast analytical and the Monte-Carlo simulation methods

Keywords

Monte Carlo methods; ion implantation; semiconductor process modelling; CPU time efficiency; Monte-Carlo simulation; computationally efficient method; ion implantation; long simulation times; process simulation; three-dimensional simulation; Algorithm design and analysis; Analytical models; Computational modeling; Convolution; Crystallization; Distribution functions; Doping profiles; Ion beams; Ion implantation; Microelectronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on

Conference_Location

Kyoto

Print_ISBN

4-930813-98-0

Type

conf

DOI

10.1109/SISPAD.1999.799258

Filename

799258