Evaluation of excess interstitial silicon amount using delta-doped boron markers grown by UHV-CVD

Author

Hiroi, Masayuki ; Ikezawa, Takeo ; Hane, Masami ; Furukawa, Akio

Author_Institution

Silicon Syst. Res. Labs., NEC Corp., Sagamihara, Japan

fYear

1999

fDate

1999

Firstpage

63

Lastpage

66

Abstract

Interstitial-silicon emission from {311} defects during postannealing after Si self-implantation was investigated using boron delta-doped marker layers epitaxially grown by ultrahigh-vacuum chemical vapor deposition. The amount of excess interstitials which remain after interstitial-vacancy recombination at early stage of postannealing after various implantation conditions was also evaluated. The amount of excess interstitials was nearly independent of implantation dose and energy, but greatly depended on implant species. A larger number of interstitials was found for implantation of arsenic than for implantation of silicon or boron

Keywords

CVD coatings; annealing; boron; diffusion; elemental semiconductors; impurity-defect interactions; interstitials; ion implantation; semiconductor epitaxial layers; silicon; Si self-implantation; Si:B; UHV-CVD growth; delta-doped B markers; epitaxial growth; excess interstitial Si evaluation; implantation dose; implantation energy; interstitial-Si emission; interstitial-vacancy recombination; postannealing; transient enhanced diffusion; ultrahigh-vacuum chemical vapor deposition; {311} defects; Annealing; Boron; Chemical vapor deposition; Implants; Ion implantation; Laboratories; National electric code; P-n junctions; Silicon; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on

Conference_Location

Kyoto

Print_ISBN

4-930813-98-0

Type

conf

DOI

10.1109/SISPAD.1999.799260

Filename

799260