Title :
Evaluation of excess interstitial silicon amount using delta-doped boron markers grown by UHV-CVD
Author :
Hiroi, Masayuki ; Ikezawa, Takeo ; Hane, Masami ; Furukawa, Akio
Author_Institution :
Silicon Syst. Res. Labs., NEC Corp., Sagamihara, Japan
Abstract :
Interstitial-silicon emission from {311} defects during postannealing after Si self-implantation was investigated using boron delta-doped marker layers epitaxially grown by ultrahigh-vacuum chemical vapor deposition. The amount of excess interstitials which remain after interstitial-vacancy recombination at early stage of postannealing after various implantation conditions was also evaluated. The amount of excess interstitials was nearly independent of implantation dose and energy, but greatly depended on implant species. A larger number of interstitials was found for implantation of arsenic than for implantation of silicon or boron
Keywords :
CVD coatings; annealing; boron; diffusion; elemental semiconductors; impurity-defect interactions; interstitials; ion implantation; semiconductor epitaxial layers; silicon; Si self-implantation; Si:B; UHV-CVD growth; delta-doped B markers; epitaxial growth; excess interstitial Si evaluation; implantation dose; implantation energy; interstitial-Si emission; interstitial-vacancy recombination; postannealing; transient enhanced diffusion; ultrahigh-vacuum chemical vapor deposition; {311} defects; Annealing; Boron; Chemical vapor deposition; Implants; Ion implantation; Laboratories; National electric code; P-n junctions; Silicon; Superlattices;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799260
