Title :
Practical inverse modeling with SIESTA
Author :
Strasser, R. ; Plasun, R. ; Selberherr, S.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
We present a simulation system which meets the requirements for a practical application of inverse modeling in a professional environment. A simulation tool interface for the integration of arbitrary simulation tools at the user level is introduced and methodology for the formation of simulation networks is described. A Levenberg-Marquardt optimizer automates the inverse modeling procedure. Strategies for the efficient execution of simulation tools are discussed. An example demonstrates the extraction of doping profile information on the basis of electrical measurements
Keywords :
doping profiles; inverse problems; semiconductor doping; semiconductor process modelling; technology CAD (electronics); Levenberg-Marquardt optimizer; SIESTA; TCAD; doping profile; electrical measurements; inverse modeling; simulation networks; simulation system; simulation tool interface; CMOS technology; Computational modeling; Concurrent computing; Data mining; Doping profiles; Electric variables measurement; Inverse problems; MOS devices; Microelectronics; Semiconductor process modeling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799268
