Title :
A novel automotive 60 V load-dump protected ESD diode
Author :
Williams, Richard K. ; Mallikarjunaswamy, Shekar ; Darwish, Mohamed ; Cornell, Mike
Author_Institution :
Siliconix-TEMIC, Santa Clara, CA, USA
Abstract :
A novel ESD diode capable of sustaining 60 V load-dump and offering 2 kV human body model ESD pulse protection is experimentally demonstrated. The ESD diode is implemented using two 60 V depletion mode n-channel quasi-vertical DMOS devices for primary protection and 15 V field oxide diode for secondary clamping. The operation of the ESD diode fabricated using a 2 μm BCD technology is described using experiments and 2D device simulations using MEDICI and SUPREM-IV. Experiments indicate that the ESD diode with an area of 17,000 μm2 is able to current limit 1.5 mA under 60 V load dump condition. Transient electrothermal simulations in conjunction with SPICE circuit simulations are used to investigate a 2.5 kV ESD event. Impact ionization, self heating and peak junction temperatures during the ESD event are also discussed
Keywords :
automotive electronics; electrostatic discharge; equivalent circuits; impact ionisation; semiconductor device models; semiconductor diodes; 1.5 mA; 2 micron; 2.5 kV; 2D device simulations; 60 V; BCD technology; ESD diode; MEDICI; SPICE circuit simulations; SUPREM-IV; automotive electronics; current limit; depletion mode n-channel quasi-vertical DMOS devices; human body model ESD pulse protection; impact ionization; load-dump protection; peak junction temperatures; secondary clamping; self heating; transient electrothermal simulations; Automotive engineering; Biological system modeling; Circuit simulation; Clamps; Diodes; Electrostatic discharge; Electrothermal effects; Humans; Medical simulation; Protection;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601517