Phase Transformation in PZT Films Studied by Scanning Probe Microscopy

Author

Wang, Z.H. ; Li, Y.R. ; Huang, P. ; Zeng, H.Z. ; Ren, Z.Q. ; Huang, M.G.

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2009

fDate

14-16 Aug. 2009

Firstpage

1

Lastpage

3

Abstract

PZT thin films on Pt/SiO₂/Si substrate were prepared by RF magnetron sputtering. Atomic force microscopy (AFM) and piezoresponse force microscopy (PFM) were employed to investigate some behavior of the phase transformation process from non-perovskite to perovskite. It was found that the ferroelectric domains in PZT film during a rapid thermal annealing grew in rosette mode, the correlation between topography and perovskite phase area was formed in early thermal annealing process, and then was broken as further annealed time increased. With the annealed time increased, some phase transformation area changed from no ferroelectric domain to mono ferroelectric domain and to multi ferroelectric domain finally.

Keywords

electric domains; ferroelectric thin films; lead compounds; rapid thermal annealing; solid-state phase transformations; zirconium compounds; PZT; PZT films; atomic force microscopy; ferroelectric domains; phase transformation; piezoresponse force microscopy; rf magnetron sputtering; scanning probe microscopy; thermal annealing; Atomic force microscopy; Ferroelectric materials; Magnetic domains; Radio frequency; Rapid thermal annealing; Rapid thermal processing; Scanning probe microscopy; Semiconductor thin films; Sputtering; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-4412-0

Type

conf

DOI

10.1109/SOPO.2009.5230068

Filename

5230068