DocumentCode
3249922
Title
Accurate resist profile simulation for large area OPC
Author
Inui, Hirotomo ; Ohta, Toshiyuki
Author_Institution
ULSI Device Dev. Lab., NEC Corp., Kanagawa, Japan
fYear
1999
fDate
1999
Firstpage
111
Lastpage
114
Abstract
We discuss a method for computing an accurate optical kernel for large area optical proximity correction (OPC). The kernel can be calculated quickly in the Fourier domain, where the higher Fourier terms are cut by a finite pupil. We apply this method to the image simulation of the fine pattern exposed by the optical system with various coherence factors and various defocuses. It is in good agreement with the rigorous result within 5% error. Also, we present a photoresist profile computation method using the kernel for a chemically amplified resist
Keywords
photoresists; proximity effect (lithography); Fourier domain; chemically amplified resist; coherence factors; fine pattern; image simulation; large area optical proximity correction; optical kernel; resist profile simulation; Chemicals; Computational modeling; Equations; Fourier transforms; Kernel; Optical computing; Optical devices; Predictive models; Resists; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location
Kyoto
Print_ISBN
4-930813-98-0
Type
conf
DOI
10.1109/SISPAD.1999.799273
Filename
799273
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