Title :
Accurate resist profile simulation for large area OPC
Author :
Inui, Hirotomo ; Ohta, Toshiyuki
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Kanagawa, Japan
Abstract :
We discuss a method for computing an accurate optical kernel for large area optical proximity correction (OPC). The kernel can be calculated quickly in the Fourier domain, where the higher Fourier terms are cut by a finite pupil. We apply this method to the image simulation of the fine pattern exposed by the optical system with various coherence factors and various defocuses. It is in good agreement with the rigorous result within 5% error. Also, we present a photoresist profile computation method using the kernel for a chemically amplified resist
Keywords :
photoresists; proximity effect (lithography); Fourier domain; chemically amplified resist; coherence factors; fine pattern; image simulation; large area optical proximity correction; optical kernel; resist profile simulation; Chemicals; Computational modeling; Equations; Fourier transforms; Kernel; Optical computing; Optical devices; Predictive models; Resists; Stimulated emission;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799273
