• DocumentCode
    3249969
  • Title

    Transport-reaction model for interface state build-up at the Si-SiO 2 interface [in MOSFETs]

  • Author

    Iizuka, Takahiro ; Yoshida, Takaki

  • Author_Institution
    ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    123
  • Lastpage
    126
  • Abstract
    The MOS interface state build-up process was simulated for a 1D MOS structure within a framework of reaction-transport model. The identified kinetics are summarized as simple power laws. The transport-limited mode of half power of the stress time has emerged universally regardless of the charge state of transported species
  • Keywords
    MOSFET; elemental semiconductors; semiconductor device models; semiconductor-insulator boundaries; silicon; silicon compounds; 1D MOS structure; MOS interface state build-up process; MOSFETs; Si-SiO2; power laws; stress time; transport-limited mode; transport-reaction model; Current measurement; Differential equations; Interface states; Kinetic theory; MOSFETs; National electric code; Partial differential equations; Power system modeling; Stress; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    4-930813-98-0
  • Type

    conf

  • DOI
    10.1109/SISPAD.1999.799276
  • Filename
    799276
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3249969