• DocumentCode
    3249988
  • Title

    Low Operating Voltage and High Efficiency Vertical GaN Based LEDs

  • Author

    Liu, W.H. ; Shan, L. ; Chang, Y. ; Doan, T. ; Tran, C. ; Chu, C. ; Cheng, C. ; Chu, J. ; Fan, F. ; Cheng, H.

  • Author_Institution
    SemiPhotonics Corp., Taiwan
  • fYear
    2009
  • fDate
    14-16 Aug. 2009
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Vertical GaN based Light Emitting Diodes (VLED) on metal alloy base were realized and characterized for solid state lighting application. An operating voltage of less than 2.9 Voltage from a high efficiency and high power blue LED was achieved. And, an efficiency of more than 120 lumens/watt from a white LED was achieved also. The dissipate heat more effectively than conventional and flip-chip LEDs, thanks to the higher thermal conductivity of a copper alloy base. This increases their maximum operating current and output power and makes them more suitable for solid-state lighting applications. In addition, these VLED exhibit many advantages over those on sapphire under extreme operation conditions for general lighting application.
  • Keywords
    III-V semiconductors; LED lamps; gallium compounds; low-power electronics; wide band gap semiconductors; GaN; VLED; heat dissipation; operating current; output power; solid-state lighting; vertical GaN based light emitting diode; Copper alloys; Costs; Electrodes; Gallium nitride; LED lamps; Light emitting diodes; Low voltage; Mirrors; Solid state lighting; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on
  • Conference_Location
    Wuhan
  • Print_ISBN
    978-1-4244-4412-0
  • Type

    conf

  • DOI
    10.1109/SOPO.2009.5230070
  • Filename
    5230070