• DocumentCode
    3250105
  • Title

    Consistent comparison of drift-diffusion and hydro-dynamic device simulations

  • Author

    Grasser, T. ; Kosina, H. ; Selberherr, S.

  • Author_Institution
    Inst. fur Microelectron., Tech. Univ. Wien, Austria
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    151
  • Lastpage
    154
  • Abstract
    Due to the ongoing downscaling of devices non-local effects become more and more important. These non-local effects can be considered in a device simulator using a hydrodynamic (HD) transport model. However, solving the equation system resulting from a HD transport model is known to be much more expensive in computational terms compared to the simpler drift-diffusion (DD) transport model. Thus the HD model should only be used when really necessary in order not to waste valuable computational resources. However, the validity of the DD model must be carefully investigated which is subject to this paper
  • Keywords
    semiconductor device models; drift-diffusion transport model; hydrodynamic transport model; nonlocal effects; semiconductor device simulation; Algebra; Computational modeling; Differential equations; High definition video; Hydrodynamics; Lattices; MOSFETs; Microelectronics; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    4-930813-98-0
  • Type

    conf

  • DOI
    10.1109/SISPAD.1999.799283
  • Filename
    799283