DocumentCode
3250105
Title
Consistent comparison of drift-diffusion and hydro-dynamic device simulations
Author
Grasser, T. ; Kosina, H. ; Selberherr, S.
Author_Institution
Inst. fur Microelectron., Tech. Univ. Wien, Austria
fYear
1999
fDate
1999
Firstpage
151
Lastpage
154
Abstract
Due to the ongoing downscaling of devices non-local effects become more and more important. These non-local effects can be considered in a device simulator using a hydrodynamic (HD) transport model. However, solving the equation system resulting from a HD transport model is known to be much more expensive in computational terms compared to the simpler drift-diffusion (DD) transport model. Thus the HD model should only be used when really necessary in order not to waste valuable computational resources. However, the validity of the DD model must be carefully investigated which is subject to this paper
Keywords
semiconductor device models; drift-diffusion transport model; hydrodynamic transport model; nonlocal effects; semiconductor device simulation; Algebra; Computational modeling; Differential equations; High definition video; Hydrodynamics; Lattices; MOSFETs; Microelectronics; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location
Kyoto
Print_ISBN
4-930813-98-0
Type
conf
DOI
10.1109/SISPAD.1999.799283
Filename
799283
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