Title :
An accurate compact model for ferroelectric memory field effect transistors
Author :
Ullmann, Marc ; Goebel, Holger ; Hoenigschmid, Heinz ; Haneder, Thomas ; Dietz, Guido W.
Author_Institution :
Inst. of Electron., Univ. of the Fed. Armed Forces, Hamburg, Germany
Abstract :
A new nonvolatile ferroelectric memory field effect transistor (FEMFET) compact model for circuit simulation is presented. Its analytical approach is based on the MOS capacitor equations taking into account the influence of ferroelectric polarization. The accuracy of the description of the ferroelectric layer has been experimentally verified and the transistor model has been used to simulate a FEMFET cell array
Keywords :
MOS capacitors; MOSFET; circuit simulation; dielectric hysteresis; dielectric polarisation; ferroelectric storage; MOS capacitor equations; cell array; circuit simulation; compact model; ferroelectric memory FET; ferroelectric polarization; hysteresis loops; nonvolatile ferroelectric memory; remanent polarization; transistor model; Circuit simulation; Dielectric substrates; Electrons; Equations; FETs; Ferroelectric materials; History; Nonvolatile memory; Polarization; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799289
