Title :
Coupled hydrodynamic and electrodynamic modelling of an transformer coupled plasma (TCP) for semiconductor processing
Author :
Scheubert, P. ; Awakowicz, Peter ; Schwefel, R. ; Wachutka, G.
Author_Institution :
Inst. for Phys. of Electrotechnol., Tech. Univ. Munchen, Germany
Abstract :
A planar transformer coupled plasma source (TCP) as used for semiconductor processing was characterised theoretically and experimentally. In this paper the homogeneity of the plasma in dependence of process pressure and coil configurations was investigated. Simulations for noble gas discharges in a wide pressure range were compared with theoretical data from a reactor model. A 2D-fluid plasma model coupled self-consistently with an electrodynamic model was used to calculate the theoretical results. Experiment and simulation show very good agreement for a wide range of parameters
Keywords :
Poisson equation; plasma CVD; plasma collision processes; plasma density; plasma materials processing; plasma radiofrequency heating; plasma simulation; semiconductor process modelling; sputter etching; 2D-fluid plasma model; Langmuir probe measurements; Poisson equation; balance equations; coil configurations; electrodynamic model; electron density profiles; hydrodynamic model; noble gas discharges; planar transformer coupled plasma source; plasma CVD; plasma collisions; plasma etching; plasma heating; plasma homogeneity; process pressure; reactor model; self-consistently coupled; semiconductor processing; simulations; wide pressure range; Coils; Electrodynamics; Electrons; Hydrodynamics; Plasma applications; Plasma density; Plasma materials processing; Plasma measurements; Plasma sources; Semiconductor process modeling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799293
