• DocumentCode
    3250450
  • Title

    Reliability assessment based on proportional degradation hazards model

  • Author

    Chen, He-Tao ; Yuan, Hong-Jie

  • Author_Institution
    Sch. of Reliability & Syst. Eng., Beihang Univ., Beijing, China
  • fYear
    2010
  • fDate
    29-31 Oct. 2010
  • Firstpage
    958
  • Lastpage
    962
  • Abstract
    Proportional hazards model is introduced into dealing with accelerated degradation test data, and a model based on proportional degradation hazards model (PDHM) is proposed, the only assumption is that the logarithm of the degradation hazard function is a linear function of the stress covariates. The PDHM is established with degradation data, then the probability density function and Likelihood function of the model are derived, and maximum likelihood estimate (MLE) and Newton-Raphson method are utilized to estimate the model parameters. According to the relationship between failure threshold and degradation measure, the reliability model of the product is established, with which the reliability is assessed. The model in this paper is demonstrated correct and valid by assessing the reliability of percent increase in resistance over time of carbon-film resistors.
  • Keywords
    Newton-Raphson method; circuit reliability; circuit testing; electric resistance; electronics industry; maximum likelihood estimation; probability; resistors; Newton-Raphson method; accelerated degradation test data; carbon-film resistors; degradation hazard function; likelihood function; maximum likelihood estimate; probability density function; proportional degradation hazard model; reliability assessment; resistance; stress covariate; Analytical models; Brain modeling; Data models; Degradation; Life estimation; Reliability; Resistance; Degradation data; Newton-Raphson method; proportional degradation hazards model; reliability assessment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Engineering and Engineering Management (IE&EM), 2010 IEEE 17Th International Conference on
  • Conference_Location
    Xiamen
  • Print_ISBN
    978-1-4244-6483-8
  • Type

    conf

  • DOI
    10.1109/ICIEEM.2010.5646465
  • Filename
    5646465