Title :
A quasi-mixed-mode MOSFET model for simulation and prediction of substrate resistance under ESD stress and layout variations
Author :
Zhang, XinYi ; Yu, Zhiping ; Dutton, Robert W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
This paper presents a novel quasi-mixed-mode model for the computation of the varying substrate resistance during ESD stress. This model also predicts the change of substrate resistance with respect to layout variations. The model shows good agreement with experimental data, and has good convergence properties. This is the first time that a model has demonstrated accuracy in predicting the substrate resistance due to both ESD stress and layout changes
Keywords :
MOSFET; circuit simulation; electric resistance; electrostatic discharge; impact ionisation; semiconductor device breakdown; semiconductor device models; 0.25 mum; 0.375 mum; ESD stress; MOSFET; NMOS devices; circuit simulation; convergence properties; device simulation; layout variations; quasi-mixed-mode model; substrate resistance; Breakdown voltage; Circuit simulation; Computational modeling; Convergence; Electrostatic discharge; MOSFET circuits; Predictive models; Protection; Stress; Voltage control;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799298
